IXTA08N120P vs IXTA08N120P-TRL vs IXTA08N120PTR

 
PartNumberIXTA08N120PIXTA08N120P-TRLIXTA08N120PTR
DescriptionMOSFET 0.8 Amps 1200V 25 RdsMOSFET IXTA08N120P TRL
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current800 mA--
Rds On Drain Source Resistance20.5 Ohms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePolarPolar-
PackagingTubeReel-
Height4.83 mm--
Length9.65 mm--
SeriesIXTA08N120--
Transistor Type1 N-Channel--
TypePolar Power MOSFET--
Width10.41 mm--
BrandIXYSIXYS-
Forward Transconductance Min0.38 S--
Fall Time24 ns--
Product TypeMOSFETMOSFET-
Rise Time26 ns--
Factory Pack Quantity50800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.081130 oz--
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