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| PartNumber | IXTH12N100L | IXTH12N100 | IXTH12N100A |
| Description | MOSFET 12 Amps 1000V 1.3 Ohms Rds | MOSFET 12 Amps 1000V 1.05 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 1.3 Ohms | 1.05 Ohms | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 400 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXTH12N100 | IXTH12N100 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 65 ns | 32 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 55 ns | 33 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 110 ns | 62 ns | - |
| Typical Turn On Delay Time | 30 ns | 21 ns | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |