IXTH200N10T vs IXTH200N075T vs IXTH200N085T

 
PartNumberIXTH200N10TIXTH200N075TIXTH200N085T
DescriptionMOSFET 200 Amps 100V 5.4 RdsMOSFET N-CH 75V 200A TO-247MOSFET N-CH 85V 200A TO-247
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current200 A--
Rds On Drain Source Resistance5.5 mOhms--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation550 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFET--
PackagingTube--
Height21.46 mm--
Length16.26 mm--
SeriesIXTH200N10--
Transistor Type1 N-Channel--
Width5.3 mm--
BrandIXYS--
Fall Time34 ns--
Product TypeMOSFET--
Rise Time31 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.229281 oz--
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