PartNumber | IXTH200N10T | IXTH200N075T | IXTH200N085T |
Description | MOSFET 200 Amps 100V 5.4 Rds | MOSFET N-CH 75V 200A TO-247 | MOSFET N-CH 85V 200A TO-247 |
Manufacturer | IXYS | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 200 A | - | - |
Rds On Drain Source Resistance | 5.5 mOhms | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 550 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | - | - |
Packaging | Tube | - | - |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXTH200N10 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5.3 mm | - | - |
Brand | IXYS | - | - |
Fall Time | 34 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 31 ns | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 35 ns | - | - |
Unit Weight | 0.229281 oz | - | - |