IXTH40N30 vs IXTH40N25 vs IXTH40N30A

 
PartNumberIXTH40N30IXTH40N25IXTH40N30A
DescriptionMOSFET 40 Amps 300V 0.085 Rds
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance85 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height21.46 mm--
Length16.26 mm--
SeriesIXTH40N30--
Transistor Type1 N-Channel--
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min25 S--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.229281 oz--
Top