IXTH500N04T2 vs IXTH50N20 vs IXTH50N10

 
PartNumberIXTH500N04T2IXTH50N20IXTH50N10
DescriptionMOSFET TRENCHT2 PWR MOSFET 40V 500AMOSFET 50 Amps 200V 0.045 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V200 V-
Id Continuous Drain Current500 A50 A-
Rds On Drain Source Resistance1.6 mOhms45 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge405 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation1 kW300 W-
Channel ModeEnhancementEnhancement-
TradenameHiPerFET--
PackagingTubeTube-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXTH500N04IXTH50N20-
TypeTrenchT2 Power MOSFET--
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Forward Transconductance Min75 S32 S-
Fall Time44 ns16 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns15 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time68 ns72 ns-
Typical Turn On Delay Time37 ns18 ns-
Unit Weight0.056438 oz0.229281 oz-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
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