IXTH50N20 vs IXTH50N10 vs IXTH50N20A

 
PartNumberIXTH50N20IXTH50N10IXTH50N20A
DescriptionMOSFET 50 Amps 200V 0.045 Rds
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance45 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height21.46 mm--
Length16.26 mm--
SeriesIXTH50N20--
Transistor Type1 N-Channel--
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min32 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.229281 oz--
Top