IXTN21N100 vs IXTN21N100L vs IXTN21N50

 
PartNumberIXTN21N100IXTN21N100LIXTN21N50
DescriptionMOSFET 21 Amps 100V 0.55 Ohm Rds21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleChassis Mount--
Package / CaseSOT-227-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance550 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation520 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.6 mm--
Length38.23 mm--
SeriesIXTN21N100--
Transistor Type1 N-Channel--
Width25.42 mm--
BrandIXYS--
Forward Transconductance Min24 S--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time30 ns--
Unit Weight1.058219 oz--
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