IXTP01N100D vs IXTP02N120P vs IXTP01N100

 
PartNumberIXTP01N100DIXTP02N120PIXTP01N100
DescriptionMOSFET 0.1 Amps 1000V 110 RdsMOSFET 500V to 1200V Polar Power MOSFET
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1.2 kV-
Id Continuous Drain Current400 mA200 mA-
Rds On Drain Source Resistance80 Ohms60 Ohms-
Vgs th Gate Source Threshold Voltage2 V4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge5.8 nC4.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation25 W33 W-
ConfigurationSingleSingle-
Channel ModeDepletionEnhancement-
PackagingTubeTube-
Height9.15 mm--
Length10.66 mm--
SeriesIXTP01N100IXTP02N120-
Transistor Type1 N-Channel1 N-Channel-
Width4.83 mm--
BrandIXYSIXYS-
Forward Transconductance Min100 mS0.12 S-
Fall Time64 ns39 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34 ns21 ns-
Typical Turn On Delay Time7 ns6 ns-
Unit Weight0.081130 oz0.012346 oz-
Top