PartNumber | IXTP01N100D | IXTP02N120P | IXTP01N100 |
Description | MOSFET 0.1 Amps 1000V 110 Rds | MOSFET 500V to 1200V Polar Power MOSFET | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220AB-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | 1.2 kV | - |
Id Continuous Drain Current | 400 mA | 200 mA | - |
Rds On Drain Source Resistance | 80 Ohms | 60 Ohms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 5.8 nC | 4.7 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 25 W | 33 W | - |
Configuration | Single | Single | - |
Channel Mode | Depletion | Enhancement | - |
Packaging | Tube | Tube | - |
Height | 9.15 mm | - | - |
Length | 10.66 mm | - | - |
Series | IXTP01N100 | IXTP02N120 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.83 mm | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 100 mS | 0.12 S | - |
Fall Time | 64 ns | 39 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 34 ns | 21 ns | - |
Typical Turn On Delay Time | 7 ns | 6 ns | - |
Unit Weight | 0.081130 oz | 0.012346 oz | - |