PartNumber | IXTP5N50P 2SK3305 | IXTP5N50P | IXTP5N60P |
Description | Darlington Transistors MOSFET 4.8 Amps 500V 1.4 Ohms Rds | IGBT Transistors MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | |
Manufacturer | - | IXYS | IXYS |
Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
Series | - | IXTP5N50 | IXTP5N60 |
Packaging | - | Tube | Tube |
Unit Weight | - | 0.081130 oz | 0.081130 oz |
Mounting Style | - | Through Hole | Through Hole |
Package Case | - | TO-220-3 | TO-220-3 |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 89 W | 100 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Fall Time | - | 24 ns | 17 ns |
Rise Time | - | 26 ns | 24 ns |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Id Continuous Drain Current | - | 4.8 A | 5 A |
Vds Drain Source Breakdown Voltage | - | 500 V | 600 V |
Rds On Drain Source Resistance | - | 1.4 Ohms | 1.7 Ohms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 65 ns | 55 ns |
Typical Turn On Delay Time | - | 22 ns | 22 ns |
Forward Transconductance Min | - | 4.7 S | 5 S |
Channel Mode | - | Enhancement | Enhancement |