PartNumber | IXTP60N20T | IXTP60N10T | IXTP60N10TM |
Description | MOSFET Trench POWER MOSFETs 200v, 60A | MOSFET MOSFET Id60 BVdass100 | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220AB-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 100 V | - |
Id Continuous Drain Current | 60 A | 60 A | - |
Rds On Drain Source Resistance | 40 mOhms | 18 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 73 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 500 W | 176 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | Tube | - |
Series | IXTP60N20 | IXTP60N10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 40 S | 42 S | - |
Fall Time | 13 ns | 37 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 13 ns | 40 ns | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | 43 ns | - |
Typical Turn On Delay Time | 22 ns | 27 ns | - |
Unit Weight | 0.012346 oz | 0.081130 oz | - |
Height | - | 9.15 mm | - |
Length | - | 10.66 mm | - |
Width | - | 4.82 mm | - |