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| PartNumber | IXTP76N25TM | IXTP76N25T | IXTP76N075T |
| Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP | MOSFET 76 Amps 250V 39 Rds | MOSFET N-CH 75V 76A TO-220 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | Trench | - | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220AB-3 | TO-220-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 29 ns | 29 ns | - |
| Id Continuous Drain Current | 76 A | 76 A | - |
| Pd Power Dissipation | 460 W | 460 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 44 mOhms | 39 mOhms | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | Trench | - | - |
| Typical Turn Off Delay Time | 56 ns | 56 ns | - |
| Typical Turn On Delay Time | 22 ns | 22 ns | - |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Channel Mode | - | Enhancement | - |
| Series | - | IXTP76N25 | - |
| Transistor Type | - | 1 N-Channel | - |
| Unit Weight | - | 0.081130 oz | - |