IXTQ130N10T vs IXTQ130N10 vs IXTQ130N15T

 
PartNumberIXTQ130N10TIXTQ130N10IXTQ130N15T
DescriptionMOSFET 130 Amps 100V 8.5 RdsMOSFET N-CH 150V 130A TO-3P
ManufacturerIXYSIXYS-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current130 A--
Rds On Drain Source Resistance8.5 mOhms--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation360 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFET--
PackagingTubeTube-
Height20.3 mm--
Length15.8 mm--
SeriesIXTQ130N10IXTQ130N10-
Transistor Type1 N-Channel1 N-Channel-
Width4.9 mm--
BrandIXYS--
Fall Time28 ns28 ns-
Product TypeMOSFET--
Rise Time47 ns47 ns-
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns44 ns-
Typical Turn On Delay Time30 ns30 ns-
Unit Weight0.194007 oz0.194007 oz-
Package Case-TO-3P-3-
Pd Power Dissipation-360 W-
Id Continuous Drain Current-130 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-8.5 mOhms-
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