IXTQ88N30P vs IXTQ88N15 vs IXTQ88N30T

 
PartNumberIXTQ88N30PIXTQ88N15IXTQ88N30T
DescriptionMOSFET 88 Amps 300V 0.04 RdsMOSFET 88 Amps 450V 0.022 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3TO-3P-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V450 V-
Id Continuous Drain Current88 A88 A-
Rds On Drain Source Resistance40 mOhms22 mOhms-
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation600 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeTube-
SeriesIXTQ88N30IXTQ88N15-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYS-
Fall Time25 ns--
Product TypeMOSFETMOSFET-
Rise Time24 ns--
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time96 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.194007 oz0.194007 oz-
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