| PartNumber | IXTT100N25P | IXTT10N100D | IXTT10N100D2 |
| Description | MOSFET 100 Amps 250V 0.027 Rds | MOSFET 10 Amps 1000V 1.4 Rds | MOSFET D2 Depletion Mode Power MOSFETs |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 1 kV | 1 kV |
| Id Continuous Drain Current | 100 A | 10 A | 10 A |
| Rds On Drain Source Resistance | 27 mOhms | 1.4 Ohms | 1.5 Ohms |
| Vgs th Gate Source Threshold Voltage | 5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Qg Gate Charge | 185 nC | 130 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 600 W | 400 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Depletion |
| Tradename | PolarHT | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 5.1 mm | 5.1 mm | - |
| Length | 14 mm | 14 mm | - |
| Series | IXTT100N25 | IXTT10N100 | IXTT10N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | PolarHT Power MOSFET | High Voltage MOSFET | - |
| Width | 16.05 mm | 16.05 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 40 S | 3 S | - |
| Fall Time | 28 ns | 75 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 26 ns | 85 ns | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | 110 ns | - |
| Typical Turn On Delay Time | 25 ns | 35 ns | - |
| Unit Weight | 0.158733 oz | 0.158733 oz | 0.229281 oz |