PartNumber | IXTT11P50-TRL | IXTT11P50 | IXTT11P50 T/R |
Description | Discrete Semiconductor Modules Power MOSFETs | MOSFET 11 Amps 500V 0.75 Rds | IXTT11P50 T/R |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-268-3 | TO-268-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Reel | Tube | - |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | P-Channel | P-Channel | - |
Fall Time | 34 ns | 35 ns | - |
Id Continuous Drain Current | - 11 A | 11 A | - |
Pd Power Dissipation | 300 W | 300 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Rds On Drain Source Resistance | 750 mOhms | 750 mOhms | - |
Rise Time | 32 ns | 27 ns | - |
Factory Pack Quantity | 400 | 30 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Typical Turn Off Delay Time | 80 ns | 35 ns | - |
Typical Turn On Delay Time | 26 ns | 33 ns | - |
Vds Drain Source Breakdown Voltage | - 500 V | 500 V | - |
Vgs th Gate Source Threshold Voltage | - 5 V | 5 V | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Qg Gate Charge | - | 130 nC | - |
Channel Mode | - | Enhancement | - |
Height | - | 5.1 mm | - |
Length | - | 14 mm | - |
Series | - | IXTT11P50 | - |
Transistor Type | - | 1 P-Channel | - |
Type | - | Standard Power MOSFET | - |
Width | - | 16.05 mm | - |
Forward Transconductance Min | - | 5 S | - |
Unit Weight | - | 0.158733 oz | - |