PartNumber | IXTT30N50L2 | IXTT30N50L | IXTT30N50P |
Description | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | MOSFET 30 Amps 500V | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
Id Continuous Drain Current | 30 A | 30 A | 30 A |
Rds On Drain Source Resistance | 215 mOhms | 200 mOhms | 200 mOhms |
Configuration | Single | Single | Single |
Packaging | Tube | Tube | Tube |
Series | IXTT30N50 | IXTT30N50 | IXTT30N50 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.158733 oz | 0.158733 oz | 0.158733 oz |
Vgs Gate Source Voltage | - | - | 30 V |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 460 W |
Channel Mode | - | - | Enhancement |
Height | - | - | 5.1 mm |
Length | - | - | 16.05 mm |
Width | - | - | 14 mm |
Forward Transconductance Min | - | - | 27 S |
Fall Time | - | - | 21 ns |
Rise Time | - | - | 27 ns |
Typical Turn Off Delay Time | - | - | 75 ns |
Typical Turn On Delay Time | - | - | 25 ns |