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| PartNumber | IXXX200N65B4 | IXXX200N60C3 | IXXX200N60B3 |
| Description | IGBT Transistors 650V/370A Trench IGBT GenX4 XPT | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Package / Case | PLUS247-3 | PLUS-247-3 | PLUS-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 370 A | 340 A | 380 A |
| Pd Power Dissipation | 1150 W | 1.63 kW | 1.63 kW |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | IXXX200N65 | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 200 A | 900 A | 900 A |
| Brand | IXYS | IXYS | IXYS |
| Gate Emitter Leakage Current | 200 nA | 200 nA | 200 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | XPT | - | - |
| Unit Weight | 0.232808 oz | - | - |
| Collector Emitter Saturation Voltage | - | 1.6 V | 1.4 V |