PartNumber | IXYH20N65C3D1 | IXYH20N65C3 | IXYH20N65B3 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors DISC IGBT XPT-GENX3 | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
RoHS | Y | - | - |
Product | Power Semiconductor Modules | - | - |
Type | GenX3 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247AD-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | - | - |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 28 ns | - | - |
Id Continuous Drain Current | 50 A | - | - |
Pd Power Dissipation | 230 W | 230 W | - |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
Rise Time | 34 ns | - | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | Discrete Semiconductor Modules | IGBTs | - |
Typical Turn Off Delay Time | 80 ns | - | - |
Typical Turn On Delay Time | 19 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
Technology | - | Si | - |
Collector Emitter Voltage VCEO Max | - | 650 V | - |
Collector Emitter Saturation Voltage | - | 2.27 V | - |
Maximum Gate Emitter Voltage | - | 20 V | - |
Continuous Collector Current at 25 C | - | 50 A | - |
Continuous Collector Current Ic Max | - | 105 A | - |
Gate Emitter Leakage Current | - | 100 nA | - |