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| PartNumber | IXYH30N120C4 | IXYH30N120C3 | IXYH30N120C3D1 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors 1200V XPT GenX3 IGBT | IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | Y |
| Product | Power Semiconductor Modules | - | - |
| Type | GenX4 | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247AD-3 | TO-247AD-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 53 ns | - | - |
| Id Continuous Drain Current | 94 A | - | - |
| Pd Power Dissipation | 500 W | 500 W | 416 W |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Rise Time | 58 ns | - | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | XPT | XPT |
| Typical Turn Off Delay Time | 205 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Technology | - | Si | Si |
| Collector Emitter Voltage VCEO Max | - | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | - | 3.7 V | 3.7 V |
| Maximum Gate Emitter Voltage | - | 30 V | 30 V |
| Continuous Collector Current at 25 C | - | 75 A | 66 A |
| Series | - | IXYH30N120 | IXYH30N120 |
| Continuous Collector Current Ic Max | - | 75 A | 66 A |
| Gate Emitter Leakage Current | - | 100 nA | 100 nA |
| Unit Weight | - | 1.340411 oz | 1.340411 oz |