IXYH30N65C3H1 vs IXYH30N65C3 vs IXYH30N65B3D1

 
PartNumberIXYH30N65C3H1IXYH30N65C3IXYH30N65B3D1
DescriptionIGBT Transistors 650V/60A XPT C3 Copacked TO-247IGBT Transistors DISC IGBT XPT-GENX3IGBT Transistors DISC IGBT XPT-GENX3
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYY-
TechnologySiSiSi
Package / CaseTO-247AD-3TO-247AD-3TO-247-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max650 V-650 V
Collector Emitter Saturation Voltage2.35 V-1.8 V
Maximum Gate Emitter Voltage30 V-20 V
Continuous Collector Current at 25 C60 A-70 A
Pd Power Dissipation270 W-270 W
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
SeriesIXYH30N65C--
PackagingTubeTube-
Continuous Collector Current Ic Max60 A-160 A
BrandIXYSIXYSIXYS
Gate Emitter Leakage Current100 nA-100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
TradenameXPTXPT, GenX3-
Unit Weight1.340411 oz--
Top