J175 vs J175,116 vs J175(2SJ175)

 
PartNumberJ175J175,116J175(2SJ175)
DescriptionJFET JFET P-Channel -30V 50mA 360mW 3.27mWJFET TAPERA P-channel FET
ManufacturerInterFETNXP Semiconductors-
Product CategoryJFETJFETs (Junction Field Effect)-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityP-Channel--
ConfigurationSingle--
Vds Drain Source Breakdown Voltage- 15 V--
Vgs Gate Source Breakdown Voltage30 V--
Drain Source Current at Vgs=0- 70 mA--
Id Continuous Drain Current- 10 nA--
Rds On Drain Source Resistance85 Ohms--
Pd Power Dissipation360 mW--
SeriesJ175--
PackagingBulkTape & Box (TB)-
TypeJFET--
BrandInterFET--
Gate Source Cutoff Voltage6 V--
Factory Pack Quantity1--
Unit Weight0.016000 oz--
Package Case-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-
Mounting Type-Through Hole-
Supplier Device Package-TO-92-
FET Type-P-Channel-
Power Max-400mW-
Voltage Breakdown V BRGSS-30V-
Drain to Source Voltage Vdss-30V-
Current Drain Idss Vds Vgs=0-7mA @ 15V-
Current Drain Id Max---
Voltage Cutoff VGS off Id-3V @ 10nA-
Input Capacitance Ciss Vds-8pF @ 10V (VGS)-
Resistance RDS On-125 Ohm-
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