PartNumber | Jan2N6987/TR | Jan2N6987 | JAN2N6901 |
Description | Bipolar Transistors - BJT | MOSFET BJTs | MOSFET Power Mosfet |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
RoHS | N | N | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | - | - |
Package / Case | TO-116-14 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Quad | - | - |
Collector Emitter Voltage VCEO Max | 60 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 1.6 V | - | - |
Maximum DC Collector Current | 600 mA | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
DC Current Gain hFE Max | 450 at 1 mA, 10 V | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 50 at 500 mA, 10 V | - | - |
Pd Power Dissipation | 1.5 W | - | - |
Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Transistors | MOSFETs | MOSFETs |
Packaging | - | Tube | Foil Bag |