Jan2N6987/TR vs Jan2N6987 vs Jan2N6987U

 
PartNumberJan2N6987/TRJan2N6987Jan2N6987U
DescriptionBipolar Transistors - BJTMOSFET BJTsMOSFET Small-Signal BJT
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTMOSFET-
RoHSNN-
TechnologySiSi-
Mounting StyleThrough Hole--
Package / CaseTO-116-14--
Transistor PolarityPNP--
ConfigurationQuad--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum DC Collector Current600 mA--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
DC Current Gain hFE Max450 at 1 mA, 10 V--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
DC Collector/Base Gain hfe Min50 at 500 mA, 10 V--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar TransistorsMOSFET-
Factory Pack Quantity11-
SubcategoryTransistorsMOSFETs-
Packaging-Tube-
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