KSA1013OTA vs KSA1013-O vs KSA1013-OBU

 
PartNumberKSA1013OTAKSA1013-OKSA1013-OBU
DescriptionBipolar Transistors - BJT PNP Epitaxial Transistor
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 160 V--
Collector Base Voltage VCBO- 160 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 1.5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSA1013--
DC Current Gain hFE Max320--
Height8 mm--
Length4.9 mm--
PackagingAmmo Pack--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 1 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation900 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.014110 oz--
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