KSB1015YTU vs KSB1015 vs KSB10150TU

 
PartNumberKSB1015YTUKSB1015KSB10150TU
DescriptionBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSE--
Mounting StyleThrough Hole--
Package / CaseTO-220F-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 0.5 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT9 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSB1015--
DC Current Gain hFE Max200--
Height9.19 mm--
Length10.16 mm--
PackagingTube--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 3 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation25 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesKSB1015YTU_NL--
Unit Weight0.080072 oz--
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