KSB798YTF vs KSB798 vs KSB798-Y

 
PartNumberKSB798YTFKSB798KSB798-Y
DescriptionBipolar Transistors - BJT PNP Epitaxial Transistor
ManufacturerON SemiconductorUTG-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHST--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.4 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT110 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSB798--
DC Current Gain hFE Max400--
Height1.7 mm (Max)--
Length4.7 mm (Max)--
PackagingReel--
Width2.7 mm (Max)--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 1 A--
DC Collector/Base Gain hfe Min90--
Pd Power Dissipation2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.004603 oz--
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