 |  | | |
| PartNumber | KSB834Y | KSB834 | KSB834-Y-HZ |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | ||
| Manufacturer | ON Semiconductor | FAI | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 60 V | - | - |
| Collector Base Voltage VCBO | - 60 V | - | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Maximum DC Collector Current | 3 A | 3 A | - |
| Gain Bandwidth Product fT | 9 MHz | 9 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 200 | 200 | - |
| Height | 9.4 mm | - | - |
| Length | 10.1 mm | - | - |
| Packaging | Bulk | Reel | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | - 3 A | - 3 A | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 200 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.080072 oz | 0.046296 oz | - |
| Package Case | - | TO-263 | - |
| Pd Power Dissipation | - | 30 W | - |
| Collector Emitter Voltage VCEO Max | - | - 60 V | - |
| Collector Emitter Saturation Voltage | - | - 0.5 V | - |
| Collector Base Voltage VCBO | - | - 60 V | - |
| Emitter Base Voltage VEBO | - | - 7 V | - |
| DC Collector Base Gain hfe Min | - | 60 | - |