KSD2012YYDTU vs KSD2012YTU vs KSD2012-Y

 
PartNumberKSD2012YYDTUKSD2012YTUKSD2012-Y
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSEE-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220F-3TO-220F-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage0.4 V0.4 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max320320-
Height9.19 mm9.19 mm-
Length10.16 mm10.16 mm-
PackagingTubeTube-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current3 A3 A-
Pd Power Dissipation25 W25 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5050-
SubcategoryTransistorsTransistors-
Unit Weight0.080072 oz0.080072 oz-
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