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| PartNumber | KSD261CYTA | KSD261 | KSD261-Y |
| Description | Bipolar Transistors - BJT NPN Epitaxial Transistor | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | T | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 Kinked Lead | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.18 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Height | 4.58 mm | - | - |
| Length | 4.58 mm | - | - |
| Packaging | Ammo Pack | - | - |
| Width | 3.86 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 500 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.008466 oz | - | - |