KSD288O vs KSD288 vs KSD288-0-AB

 
PartNumberKSD288OKSD288KSD288-0-AB
DescriptionBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON SemiconductorFSC-
Product CategoryBipolar Transistors - BJTIC Chips-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max55 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current3 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max240--
Height9.4 mm (Max)--
Length10.1 mm (Max)--
PackagingBulkBulk-
Width4.7 mm (Max)--
BrandON Semiconductor / Fairchild--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation25 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity200--
SubcategoryTransistors--
Unit Weight0.080072 oz--
Series---
Part Status-Obsolete-
Transistor Type-NPN-
Current Collector (Ic) (Max)-3A-
Voltage Collector Emitter Breakdown (Max)-55V-
Vce Saturation (Max) @ Ib, Ic-1V @ 100mA, 1A-
Current Collector Cutoff (Max)-50A (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce-120 @ 500mA, 5V-
Power Max-25W-
Frequency Transition---
Operating Temperature-150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-3-
Base Part Number-KSD288-
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