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| PartNumber | KSD363O | KSD363Y | KSD363 |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 120 V | 120 V | - |
| Collector Base Voltage VCBO | 300 V | 300 V | - |
| Emitter Base Voltage VEBO | 8 V | 8 V | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | - |
| Maximum DC Collector Current | 6 A | 6 A | - |
| Gain Bandwidth Product fT | 10 MHz | 10 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 240 | 240 | - |
| Height | 9.4 mm (Max) | 9.4 mm (Max) | - |
| Length | 10.1 mm (Max) | 10.1 mm (Max) | - |
| Packaging | Bulk | Bulk | - |
| Width | 4.7 mm (Max) | 4.7 mm (Max) | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 6 A | 6 A | - |
| DC Collector/Base Gain hfe Min | 40 | 40 | - |
| Pd Power Dissipation | 40 W | 40 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 200 | 200 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.080072 oz | 0.080072 oz | - |