KSE45H11 vs KSE45H11 , MM5116DW1 vs KSE45H11,KSE45H11TU,E45H

 
PartNumberKSE45H11KSE45H11 , MM5116DW1KSE45H11,KSE45H11TU,E45H
DescriptionBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 80 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 1 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT40 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSE45H--
Height9.4 mm--
Length10.1 mm--
PackagingBulk--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 10 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation50 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1200--
SubcategoryTransistors--
Unit Weight0.063493 oz--
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