KSP56TA vs KSP56 vs KSP56-G

 
PartNumberKSP56TAKSP56KSP56-G
DescriptionBipolar Transistors - BJT PNP Si Transistor EpitaxialBipolar Junction Transistor, PNP Type, TO-92
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3 Kinked Lead--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 80 V--
Collector Base Voltage VCBO- 80 V--
Emitter Base Voltage VEBO- 4 V--
Collector Emitter Saturation Voltage- 0.25 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSP56--
Height4.7 mm--
Length4.7 mm--
PackagingAmmo Pack--
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 0.5 A--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.008466 oz--
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