KSP8099TA vs KSP8099TF vs KSP8099TA KSP8099

 
PartNumberKSP8099TAKSP8099TFKSP8099TA KSP8099
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Si Transistor Epitaxial
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3 Kinked LeadTO-92-3 Kinked Lead-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO80 V80 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.4 V0.4 V-
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max300300-
Height4.58 mm4.7 mm-
Length4.58 mm4.7 mm-
PackagingAmmo PackReel-
Width3.86 mm3.93 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current0.5 A0.5 A-
Pd Power Dissipation625 mW625 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Unit Weight0.008466 oz0.008466 oz-
Series-KSP8099-
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