MG12100D-BA1MM vs MG12100S-BN2MM vs MG12100H-XN2MM

 
PartNumberMG12100D-BA1MMMG12100S-BN2MMMG12100H-XN2MM
DescriptionIGBT Modules 1200V 100A DualIGBT Modules 1200V 100A Dual
ManufacturerLittelfuseLittelfuse-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage1.8 V1.7 V-
Continuous Collector Current at 25 C160 A140 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation1000 W450 W-
Package / CasePackage DPackage S-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 125 C-
PackagingBulkBulk-
SeriesMG12100DMG12100S-
BrandLittelfuseLittelfuse-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity60100-
SubcategoryIGBTsIGBTs-
Unit Weight10.053079 oz5.643834 oz-
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