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MJD340-13 vs MJD340 vs MJD340-1

 
PartNumberMJD340-13MJD340MJD340-1
DescriptionBipolar Transistors - BJT HIGH VOLTAGE NPN SMTBipolar Transistors - BJT 0.5A 300V 15W NPN
ManufacturerDiodes IncorporatedON SemiconductorDIODES
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTIC Chips
RoHSYN-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDPAK-3TO-252-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max300 V300 V-
Collector Base Voltage VCBO300 V300 V-
Emitter Base Voltage VEBO3 V3 V-
Maximum DC Collector Current0.5 A0.5 A0.5 A
Minimum Operating Temperature- 55 C- 65 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMJD340-MJD340
DC Current Gain hFE Max30 at 50 mA, 10 V-30 at 50 mA at 10 V
Height2.4 mm2.38 mm-
Length6.8 mm6.73 mm-
PackagingReelTubeReel
Width6.2 mm6.22 mm-
BrandDiodes IncorporatedON Semiconductor-
DC Collector/Base Gain hfe Min30 at 50 mA, 10 V30-
Pd Power Dissipation1560 mW15 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity250075-
SubcategoryTransistorsTransistors-
Unit Weight0.009185 oz-0.009185 oz
Collector Emitter Saturation Voltage-1 V-
Continuous Collector Current-0.5 A-
Package Case--DPAK
Pd Power Dissipation--1560 mW
Collector Emitter Voltage VCEO Max--300 V
Collector Base Voltage VCBO--300 V
Emitter Base Voltage VEBO--3 V
DC Collector Base Gain hfe Min--30 at 50 mA at 10 V
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