MJD44H11T4 vs MJD44H11T4-A vs MJD44H11T4-A-CUT TAPE

 
PartNumberMJD44H11T4MJD44H11T4-AMJD44H11T4-A-CUT TAPE
DescriptionBipolar Transistors - BJT NPN Gen Pur SwitchBipolar Transistors - BJT Complementary power transistors
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current8 A16 A-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD44H11MJD44H11T4-A-
Height2.4 mm2.4 mm-
Length6.6 mm6.6 mm-
PackagingReelReel-
Width6.2 mm6.2 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Unit Weight0.063493 oz0.139332 oz-
Qualification-AEC-Q101-
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