MJE13009 vs MJE13009,MJE13009A vs MJE13009-1

 
PartNumberMJE13009MJE13009,MJE13009AMJE13009-1
DescriptionBipolar Transistors - BJT 12A 400V 100W NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSN--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current12 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height9.28 mm (Max)--
Length10.28 mm (Max)--
PackagingTube--
Width4.82 mm (Max)--
BrandON Semiconductor--
Continuous Collector Current12 A--
DC Collector/Base Gain hfe Min8--
Pd Power Dissipation12 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz--
Top