MKI75-06A7T vs MKI75-12E8 vs MKI75-06A7

 
PartNumberMKI75-06A7TMKI75-12E8MKI75-06A7
DescriptionIGBT Modules 75 Amps 600VMOD IGBT H-BRIDGE 1200V 130A E3IGBT Modules 75 Amps 600V
ManufacturerIXYS-IXYS
Product CategoryIGBT Modules-Module
RoHSY--
ProductIGBT Silicon Modules-IGBT Silicon Modules
ConfigurationQuad-Full Bridge Inverter
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage600 V-600 V
Continuous Collector Current at 25 C90 A-90 A
Gate Emitter Leakage Current200 nA-200 nA
Pd Power Dissipation280 W--
Package / CaseE2-12--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingBulk-Bulk
Height17 mm--
Length107.5 mm--
SeriesMKI75-MKI75
Width45 mm--
BrandIXYS--
Mounting StyleChassis Mount-Screw
Maximum Gate Emitter Voltage20 V-+/- 20 V
Product TypeIGBT Modules--
Factory Pack Quantity6--
SubcategoryIGBTs--
Package Case--E2
Mounting Type--Chassis Mount
Supplier Device Package--E2
Input--Standard
Power Max--280W
Current Collector Ic Max--90A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--1.3mA
IGBT Type--NPT
Vce on Max Vge Ic--2.6V @ 15V, 75A
Input Capacitance Cies Vce--3.2nF @ 25V
NTC Thermistor--Yes
Pd Power Dissipation--280 W
Collector Emitter Voltage VCEO Max--600 V
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