MMBF170 vs MMBF170-7-F vs MMBF170 6Z

 
PartNumberMMBF170MMBF170-7-FMMBF170 6Z
DescriptionMOSFET N-Ch EnhanceMOSFET 60V 225mW
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current500 mA500 mA-
Rds On Drain Source Resistance5 Ohms5 Ohms-
Vgs Gate Source Voltage20 V10 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 mW300 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.2 mm1 mm-
Length2.9 mm2.9 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesMMBF170MMBF170-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETEnhancement Mode Field Effect Transistor-
Width1.3 mm1.3 mm-
BrandON Semiconductor / FairchildDiodes Incorporated-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesMMBF170_NL--
Unit Weight0.001058 oz0.000282 oz-
Vgs th Gate Source Threshold Voltage-800 mV-
Forward Transconductance Min-80 mS-
Typical Turn Off Delay Time-10 ns-
Typical Turn On Delay Time-10 ns-
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