MMBT3906WT1G vs MMBT3906WT1 vs MMBT3906WT1 , MAX6722UTY

 
PartNumberMMBT3906WT1GMMBT3906WT1MMBT3906WT1 , MAX6722UTY
DescriptionBipolar Transistors - BJT 200mA 40V PNPBipolar Transistors - BJT 200mA 40V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-70-3SC-70-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 40 V- 40 V-
Collector Base Voltage VCBO- 40 V- 40 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage- 0.4 V- 0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT3906W--
Height0.85 mm0.85 mm-
Length2.1 mm2.1 mm-
PackagingReelReel-
Width1.24 mm1.24 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.2 A- 0.2 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz0.000219 oz-
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