 | | | |
| PartNumber | MMBTA42 | MMBTA42 1D | MMBTA42 100-200 1D |
| Description | Bipolar Transistors - BJT | ||
| Manufacturer | NXP | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 300 V | - | - |
| Collector Base Voltage VCBO | 300 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 50 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Brand | NXP Semiconductors | - | - |
| DC Collector/Base Gain hfe Min | 25 at 1 mA, 10 V | - | - |
| Pd Power Dissipation | 240 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |