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| PartNumber | MTW32N20E | MTW32N20EG | MTW32N20 |
| Description | MOSFET 200V 32A N-Channel | MOSFET NFET T0247 200V 32A 75mOhm | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | N | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 75 mOhms | 75 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 180 W | 180 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Tube |
| Height | 20.3 mm | 20.3 mm | - |
| Length | 15.9 mm | 15.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 12 S | 12 S | - |
| Fall Time | 91 ns | 91 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | 120 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 75 ns | 75 ns | - |
| Typical Turn On Delay Time | 25 ns | 25 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Series | - | - | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 200V |
| Current Continuous Drain (Id) @ 25°C | - | - | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 120nC @ 10V |
| Vgs (Max) | - | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 5000pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 180W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 75 mOhm @ 16A, 10V |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247 |