MUN5114T1G vs MUN 5114T1 vs MUN5114T1 / 6D

 
PartNumberMUN5114T1GMUN 5114T1MUN5114T1 / 6D
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON SemiconductorMOT-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.21--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation202 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN5114--
PackagingReel--
DC Current Gain hFE Max80--
Height0.85 mm--
Length2.1 mm--
Width1.24 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
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