MUR4100EG vs MUR4100ERL vs MUR4100E

 
PartNumberMUR4100EGMUR4100ERLMUR4100E
DescriptionRectifiers 1000V 4A UltraFastRectifiers 1000V 4A UltraFastDIODE GEN PURP 1KV 4A DO201AD
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryRectifiersRectifiersDiodes, Rectifiers - Single
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseDO-201ADDO-201AD-
Vr Reverse Voltage1000 V1000 V-
If Forward Current4 A4 A-
TypeFast Recovery RectifiersFast Recovery Rectifiers-
ConfigurationSingleSingle-
Vf Forward Voltage1.85 V1.85 V-
Max Surge Current70 A70 A-
Ir Reverse Current25 uA25 uA-
Recovery Time100 ns100 ns-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesMUR4100E-SWITCHMODE
PackagingBulkReelBulk
Height5.3 mm5.3 mm (Max)-
Length9.5 mm9.5 mm (Max)-
ProductRectifiersRectifiers-
Termination StyleThrough HoleThrough Hole-
Width5.3 mm5.3 mm (Max)-
BrandON SemiconductorON Semiconductor-
Pd Power Dissipation---
Product TypeRectifiersRectifiers-
Factory Pack Quantity500--
SubcategoryDiodes & RectifiersDiodes & Rectifiers-
Unit Weight0.038801 oz0.038801 oz-
Package Case--DO-201AA, DO-27, Axial
Mounting Type--Through Hole
Supplier Device Package--DO-201AD
Speed--Fast Recovery = 200mA (Io)
Diode Type--Standard
Current Reverse Leakage Vr--25μA @ 1000V
Voltage Forward Vf Max If--1.85V @ 4A
Voltage DC Reverse Vr Max--1000V (1kV)
Current Average Rectified Io--4A
Reverse Recovery Time trr--100ns
Capacitance Vr F---
Operating Temperature Junction---65°C ~ 175°C
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