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| PartNumber | NE3509M04-A | NE3509M04-EVNF24-A | NE3509M04 |
| Description | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | RF Development Tools For NE3509M04-A | |
| Manufacturer | CEL | CEL | CEL |
| Product Category | RF JFET Transistors | RF Development Tools | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Transistor Type | HFET | - | HFET |
| Technology | GaAs | - | GaAs |
| Gain | 17.5 dB | - | 17.5 dB |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Id Continuous Drain Current | 60 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 150 mW | - | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | FTSMM-4 (M04) | - | - |
| Operating Frequency | 2 GHz | - | 2 GHz |
| Product | RF JFET | Evaluation Boards | - |
| Type | GaAs HFET | RF Transistors | - |
| Brand | CEL | CEL | - |
| Forward Transconductance Min | 80 mS | - | - |
| Gate Source Cutoff Voltage | - 0.5 V | - | - 0.5 V |
| NF Noise Figure | 0.4 dB | - | - |
| P1dB Compression Point | 11 dBm | - | - |
| Product Type | RF JFET Transistors | RF Development Tools | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Development Tools | - |
| Tool Is For Evaluation Of | - | NE3509M04 | - |
| Frequency | - | 1 GHz to 6 GHz | - |
| Package Case | - | - | FTSMM-4 (M04) |
| Pd Power Dissipation | - | - | 150 mW |
| Id Continuous Drain Current | - | - | 60 mA |
| Vds Drain Source Breakdown Voltage | - | - | 4 V |
| Forward Transconductance Min | - | - | 80 mS |
| Vgs Gate Source Breakdown Voltage | - | - | - 3 V |
| NF Noise Figure | - | - | 0.4 dB |
| P1dB Compression Point | - | - | 11 dBm |