NE85633-R23-A vs NE85633-R24-A vs NE85633-R25-A

 
PartNumberNE85633-R23-ANE85633-R24-ANE85633-R25-A
DescriptionRF Bipolar Transistors NPN Silicon Amplifier and Oscillator Transistor RoHS compliantRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High Frequency
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
TechnologySiSiSi
BrandCELCEL-
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
SubcategoryTransistorsTransistors-
RoHS-Y-
Transistor Type-BipolarNPN
Transistor Polarity-NPNNPN
Collector Emitter Voltage VCEO Max-12 V-
Emitter Base Voltage VEBO-3 V-
Continuous Collector Current-0.1 A0.1 A
Configuration-SingleSingle
Mounting Style-SMD/SMTSMD/SMT
Package / Case-SOT-23-3-
Type-RF Bipolar Small Signal-
Pd Power Dissipation-200 mW (1/5 W)-
Factory Pack Quantity-1-
Unit Weight-0.000282 oz0.050717 oz
Series---
Packaging--Bulk
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23
Power Max--200mW
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--12V
DC Current Gain hFE Min Ic Vce--125 @ 20mA, 10V
Frequency Transition--7GHz
Noise Figure dB Typ f--1.1dB @ 1GHz
Gain--11.5dB
Pd Power Dissipation--0.2 W
Collector Emitter Voltage VCEO Max--12 V
Emitter Base Voltage VEBO--3 V
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