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| PartNumber | NE85634-A | NE85634 | NE85634-T1 |
| Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency | RF TRANS NPN 12V 6.5GHZ SOT89 |
| Manufacturer | CEL | CEL | CEL |
| Product Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| Series | - | - | - |
| Packaging | Bulk Alternate Packaging | Bulk Alternate Packaging | Tape & Reel (TR) |
| Unit Weight | 0.004603 oz | 0.004603 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | TO-243AA | TO-243AA | TO-243AA |
| Technology | Si | Si | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | SOT-89 | SOT-89 | SOT-89 |
| Configuration | Single Dual Collector | Single Dual Collector | - |
| Power Max | 2W | 2W | 2W |
| Transistor Type | NPN | NPN | NPN |
| Current Collector Ic Max | 100mA | 100mA | 100mA |
| Voltage Collector Emitter Breakdown Max | 12V | 12V | 12V |
| DC Current Gain hFE Min Ic Vce | 50 @ 20mA, 10V | 50 @ 20mA, 10V | 50 @ 20mA, 10V |
| Frequency Transition | 6.5GHz | 6.5GHz | 6.5GHz |
| Noise Figure dB Typ f | 1.1dB @ 1GHz | 1.1dB @ 1GHz | 1.4dB @ 1GHz |
| Gain | 9dB | 9dB | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | + 25 C | + 25 C | - |
| Operating Frequency | 6.5 GHz | 6.5 GHz | - |
| Collector Emitter Voltage VCEO Max | 12 V | 12 V | - |
| Transistor Polarity | NPN | NPN | - |
| Emitter Base Voltage VEBO | 3 V | 3 V | - |
| Maximum DC Collector Current | 100 mA | 100 mA | - |
| Continuous Collector Current | 20 mA | 20 mA | - |
| DC Collector Base Gain hfe Min | 120 | 120 | - |