NSBC123JDXV6T1G vs NSBC123JDXV6T vs NSBC123JDXV6T1

 
PartNumberNSBC123JDXV6T1GNSBC123JDXV6TNSBC123JDXV6T1
DescriptionBipolar Transistors - Pre-Biased 100mA 50V Dual NPNTRANS 2NPN PREBIAS 0.5W SOT563
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio0.047--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation357 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSBC123JDXV6--
PackagingReel--
DC Current Gain hFE Max80--
Height0.55 mm--
Length1.6 mm--
Width1.2 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
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