NSS40300MDR2G vs NSS40300MDG vs NSS40300MZ4

 
PartNumberNSS40300MDR2GNSS40300MDGNSS40300MZ4
DescriptionBipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOIC-Narrow-8--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSS40300MD--
DC Current Gain hFE Max250 at 10 mA, 2 V--
Height1.5 mm--
Length5 mm--
PackagingReel--
Width4 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min250 at 10 mA, 2 V, 220 at 500 mA, 2 V, 180 at 1 A, 2 V, 150 at 2 A, 2 V--
Pd Power Dissipation783 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.005044 oz--
Top